Installation type | Surface mount |
packing | pipe |
series | HEXFET® |
Part status | stop production |
working temperature | - |
Encapsulation/Housing | 8-SOIC(0.154,3.90mm wide) |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 2W |
FET Type | N and P Channel |
Drain source voltage (Vdss) | 20V |
Current at 25 ° C - continuous drain (Id) | 3A,2.5A |
On resistance (maximum) for different Ids and Vgs | 125 mΩ @ 1A,10V |
Vgs (th) (maximum) for different Ids | 1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 25nC @ 10V |
Input capacitance at different Vds (Ciss) (maximum) | 300pF @ 15V |
FET function | standard |